アナログ&パワー

Description
The N0412N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 3.7 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 5550 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 3.3 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 5550 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0434N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 3.7 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 5550 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 4.2 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 7730 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 4.6 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 7730 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Low on-state resistance
RDS (on) = 4.6 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low input capacitance Ciss = 7730 pF TYP. (VDS = 25V, VGS = 0V)
・ High current ID(DC) = ±100A
・ RoHS Compliant

Description
The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 3.25 mΩ MAX. (VGS = 10V, ID = 50A)
・ Low Ciss: Ciss = 4900 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP109N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 2.2 mΩ MAX. (VGS = 10V, ID = 55A)
・ Low Ciss: Ciss = 7500 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP110N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 1.4 mΩ MAX. (VGS = 10V, ID = 55A)
・ Low Ciss: Ciss = 10500 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 1.75 mΩ MAX. (VGS = 10V, ID = 55A)
・ Low Ciss: Ciss = 10700 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 2.10 mΩ MAX. (VGS = 10V, ID = 80A)
・ Low Ciss: Ciss = 7500 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 1.40 mΩ MAX. (VGS = 10V, ID = 90A)
・ Low Ciss: Ciss = 10700 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
・Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 30 A)
・ Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 3.85 mΩ MAX. (VGS = 10V, ID = 30A)
・ Low Ciss: Ciss = 2450 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
・ Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 5.5 mΩ MAX. (VGS = 10V, ID = 30A)
・ Low Ciss: Ciss = 2500 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
・ Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 2.95 mΩ MAX. (VGS = 10V, ID = 45A)
・ Low Ciss: Ciss = 3900 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
・ Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 4.0 mΩ MAX. (VGS = 10V, ID = 45A)
・ Low Ciss: Ciss = 4000 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
・ Super low on-state resistance RDS(on) = 2.8 mΩ MAX. (VGS = 10 V, ID = 45 A)
・ Low Ciss: Ciss = 4700 pF TYP. (VDS = 25 V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP90N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 2.8 mΩ MAX. (VGS = 10V, ID = 45A)
・ Low Ciss: Ciss = 3900 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
The NP90N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
・ Super low on-state resistance
RDS(on) = 3.85 mΩ MAX. (VGS = 10V, ID = 45A)
・ Low Ciss: Ciss = 4000 pF TYP. (VDS = 25V)
・ Designed for automotive application and AEC-Q101 qualified

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5 to 6V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Temperature hysteresis type.
・ High density mounting
・ Power supply voltage applies 12V and 24V.

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5 to 6V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Temperature hysteresis type.
・ High density mounting
・ Power supply voltage applies 12V and 24V.

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
・ Logic level operation (5V Gate drive).
・ Built-in the over temperature shut-down circuit.
・ High endurance capability against to the short circuit.
・ Latch type shut down operation (need 0 voltage recovery).
・ Built-in the current limitation circuit.
・ Power supply voltage applies 12V and 24V.
・ AEC-Q101 Compliant

Features
・ Low on-resistance
RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-state resistance
RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25℃)
・ High speed switching

Features
・ Low on-state resistance RDS(on) = 1.9 Ω typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.385 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 0.325 Ω typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.715 Ω typ. (at ID = 5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-state resistance RDS(on) = 1.4 Ω typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25 ℃)
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.77 Ω typ. (at ID = 5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.58 Ω typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance RDS(on) = 0.475 Ω typ. (at ID = 8 A, VGS = 10 V, Ta = 25 ℃)
・ Low leakage current
・ High speed switching

Features
・ Low on-resistance
RDS(on) = 13.5 Ω typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25℃)
・ Low drive current
・ High density mounting

Features
· Low on-resistance
RDS(on) = 9.8Ωtyp. (at ID = 0.5A, VGS = 10V, Ta = 25 °C)
· Low leakage current
· High speed switching

Features
· Low on-resistance RDS(on) = 1.1 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25 ℃)
· Low leakage current
· High speed switching

Features
・ High speed switching
・ Low on-state voltage
・ Built in fast recovery diode in one package

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
・ Built in fast recovery diode in one package
・ Trench gate and thin wafer technology
・ High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load)

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.4V typ. (at IC = 25A, VGE = 15V, Ta = 25°C)
・ Trench gate and thin wafer technology
・ High speed switching

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.4V typ. (at IC = 30A, VGE = 15V, Ta = 25°C)
・ Trench gate and thin wafer technology
・ High speed switching

Features
・ Low collector to emitter saturation voltage
VCE(sat) = 1.37V typ. (IC = 40A, VGE = 15V, Ta = 25°C)
・ Trench gate and thin wafer technology
・ High speed switching

Features
・ High breakdown-voltage
・ Low Collector to Emitter saturation Voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
・ Short circuit withstand time (6 μs typ.)
・ Trench gate and thin wafer technology (G6H series)

Features
・ High speed switching
・ Low on-state voltage
・ Built in fast recovery diode in one package

Features
・ High speed switching
・ Low on-state voltage
・ Built in fast recovery diode in one package

Features
・ Low forward voltage drop and suitable for high efficiency rectifying.
・ VSON-3 Package is suitable for high density surface mounting.

Features
・ Low forward voltage drop and suitable for high efficiency rectifying.
・ VSON-3 Package is suitable for high density surface mounting.

Features
・ Low forward voltage drop and suitable for high efficiency rectifying.
・ VSON-4 Package is suitable for high density surface mounting.

Features
・ Low reverse voltage drop and suitable for high efficiency rectifying.
・ VSON-3 Package is suitable for high density surface mounting.

Features
・ Low reverse voltage drop and suitable for high efficiency rectifying.
・ VSON-4 Package is suitable for high density surface mounting.

Features
・Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
・ Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)
・ Low reverse current: IR = 1 μA max. (at VR = 360 V)

Features
・ Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 20 A, di/dt = 100 A/μs)
・ Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)
・ Low reverse current: IR = 1 μA max. (at VR = 360 V)

Features
・ Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
・ Low forward voltage: VF = 1.6 V typ. (at IF = 10 A)
・ Low reverse current: IR = 1 μA max. (at VR = 430 V)
・ Isolated package: TO-220FP (2pin)

Features
・ Ultra fast reverse recovery time: trr = 25 ns typ. (at IF = 20 A, di/dt = 100 A/μs)
・ Low forward voltage: VF = 1.5 V typ. (at IF = 20 A)
・ Low reverse current: IR = 1 μA max. (at VR = 430 V)
・ Isolated package: TO-220FP (2pin)

Description
The μPD166015 is an N-channel high side driver with built-in charge pump and embedded protection function. It is also a linear solenoid driver with a built-in differential amplifier.
When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent destruction and degradation of the product. When the current flows through the external shunt resistor near the input part of the differential amplifier, the voltage drops at each end of the resistor. The output current can be monitored when the microcomputer reads the output voltage from the amplifier.

Description
The μPD166105 is a high-voltage, dual output, and N-channel low-side intelligent power device with built-in overtemperature-protection, overcurrent-limitation, and disconnection-detection circuits.
It protects itself by shutting down or limiting current when it detects overtemperature or overcurrent.
Output MOS shut down is restarted automatically by cooling of the chip temperature.
When load is normal, a diagnostic output is produced on detection of a flyback voltage.
When load is disconnected, diagnostic output stops.

Features
・ IT (RMS) : 12A
・ VDRM : 700V
・ IFGTI, IRGTI, IRGT III : 50mA
・ Viso : 1800V
・ The Product guaranteed maximum junction temperature 150°C
・ Insulated Type
・ Planar Type
・ UL Recognized : File No. E223904

Features
・ IT (RMS) : 16A
・ VDRM : 800V
・ IFGTI, IRGTI, IRGT III : 30mA
・ The Product guaranteed maximum junction temperature 150°C
・ Non-Insulated Type
・ Planar Type

Features
・ IT (RMS) : 20A
・ VDRM : 800V
・ IFGTI, IRGTI, IRGT III : 30mA
・ Viso : 1800V
・ The Product guaranteed maximum junction temperature 150°C
・ Insulated Type
・ Planar Type
・ UL Recognized : File No. E223904

Features
・ IT (RMS) : 40A
・ VDRM : 600V
・ Tj: 150 °C
・ IFGTI, IRGTI, IRGT :50mA
・ Viso:2000V
・ Insulated Type
・ Planar Passivation Type

Features
・ IT (RMS) : 8A
・ VDRM : 700V
・ IFGTI, IRGTI, IRGT III : 30mA
・ Non-Insulated Type
・ Planar Type
・ Surface Mounted type

Features
・ IT (RMS) : 8A
・ VDRM : 800V(Tj=125 )
・ IFGTI, IRGTI, IRGT III : 30mA
・ Viso: 2000V
・ The Product guaranteed maximum junction temperature 150°C
・ Insulated Type
・ Planar Type
・ UL Recognized: File No. E223904

Features
・ IT (AV) : 0.4A
・ VDRM : 600V
・ IGT: 100μA
・ Planar Type

Features
・ IT (AV) : 3 A
・ VDRM : 600 V
・ IGT: 100 μA
・Viso : 2000 V
Insulated Type
Planar Type
UL Recognized : File No. E223904

Description
The R2A20133D controls a boost converter to provide an active power factor correction.
The R2A20133D adopts critical conduction mode for power factor correction and realizes high efficiency and a low switching noise by zero current switching.
Because the zero current is detected by using the GND current, the ZCD Auxiliary winding is unnecessary.
The feedback loop open detection, two mode overvoltage protection, overcurrent protection are built in the R2A20133D, and can constitute a power supply system of high reliability with few external parts.
Features

• Absolute Maximum Ratings
  • Supply voltage Vcc: 24V
  • Operating junction temperature Tjopr: –40 to +150°C<
• Electrical characteristics
  • UVLO operation start voltage VH: 9.5V ± 0.7V
  • UVLO operation shutdown voltage VL: 8.5V ± 0.4V
  • UVLO hysteresis voltage Hysuvl: 1.0V ± 0.4V
• Functions
  • Boost converter control with critical conduction mode
  • Two mode overvoltage protection and OVP2
    • Mode 1: Dynamic OVP corresponding to a voltage rise by load change
    • Mode 2: Static OVP corresponding to overvoltage in stable.
    • OVP2: OVP2 senses the PFC output voltage by independence pin.
  • Feedback loop, open detection
  • Overcurrent protection
  • Dynamic UVP corresponding to a voltage fall by load change
  • Frequency limiter, adjustable
  • Zero Current Detect (ZCD) delay time, adjustable
  • CS pin's open detection
  • Package lineup: Pb-free SOP-8 (JEDEC)

FEATURES
・ Low noise figure and high associated gain:
NF = 0.45dB TYP., Ga = 13dB TYP. @VDS = 2V, ID = 10mA, f = 12GHz
NF = 0.5dB TYP., Ga = 12dB TYP. @VDS = 2V, ID = 6mA, f = 12GHz (Reference Value)
・ Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
・ DBS LNB gain-stage, Mix-stage
・ Low noise amplifier for microwave communication system

FEATURES
・ Low noise figure and high associated gain:
NF = 0.65dB TYP., Ga = 13.5dB TYP. @ f = 20GHz, VDS = 2V, ID = 10mA
・ K band Micro-X plastic (S03) package
APPLICATIONS
・ 20GHz band DBS LNB
・ Other K band communication system

FEATURES
・ High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
・ High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
・ High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)

FEATURES
・ High Output Power : Pout = 39.5dBm TYP. (VDS = 7.5V, IDset = 200mA, f = 460 MHz, Pin = 25dBm)
・ High power added efficiency : ηadd = 66% TYP. (VDS = 7.5V, IDset = 200mA, f = 460 MHz, Pin = 25dBm)
・ High Linear gain : GL = 22dB TYP. (VDS = 7.5V, IDset = 200mA, f = 460 MHz, Pin = 10dBm)
・ High ESD tolerance : ESD tolerance > 8 kV (IEC61000-4-2, Contact discharge)
・ Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
・ 150 MHz Band Radio System
・ 460 MHz Band Radio System
・ 900 MHz Band Radio System

DESCRIPTION
The μPD5756T6N is a low noise wideband amplifier IC with the through function mainly designed for the digital TV application. This IC exhibits low noise figure and low distortion characteristics.
This IC is manufactured using our latest SiGe BiCMOS process that shows superior high frequency characteristics.
FEATURES
・ Low voltage operation : VCC = 3.1 to 3.5V (3.3V TYP.)
・ Low current consumption : ICC1 = 25mA TYP. @VCC = 3.3V (LNA-mode)
: ICC2 = 1 μA MAX. @VCC = 3.3V (Bypass-mode)
・ Operation frequency : f = 40 to 1 000MHz
・ Low noise : NF = 3.2dB TYP. @f = 1 000MHz (LNA-mode)
・ Low distortion : IIP3 = +9dBm TYP. @f1 = 500MHz, f2 = 505MHz (LNA-mode)
・ Low insertion loss : Lins = 1.7dB TYP. @f = 1000MHz (Bypass-mode)
・ High-density surface mounting : 6-pin plastic TSON (T6N) package (1.5 × 1.5 × 0.37mm)
APPLICATIONS
・ Low noise amplifier for the digital TV system, etc.

DESCRIPTION
The μPG2430T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN.
This device can operate at frequencies from 0.5 to 6.0GHz, with low insertion loss and high isolation.
This device is housed in a 8-pin plastic TSON (Thin Small Out-line Non-leaded) package and is suitable for highdensity
surface mounting.
FEATURES
・ Switch Control voltage : Vcont (H) = 3.0V TYP., Vcont (L) = 0V TYP.
・ Low insertion loss : Lins = 0.55dB TYP. @ f = 2.5GHz
: Lins = 0.65dB TYP. @ f = 6.0GHz
・ High isolation : ISL = 28dB TYP. @ f = 2.5GHz
: ISL = 25dB TYP. @ f = 6.0GHz
・ Handling power : Pin (0.1dB) = +28.0dBm TYP. @ Vcont (H) = 3.0V, Vcont (L) = 0V
・ High-density surface mounting : 8-pin plastic TSON package (1.5 × 1.5 × 0.37mm)
APPLICATIONS
・ Bluetooth and IEEE802.11a/b/g etc.

Description
The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity
from low to high output at high temperatures, and reduces the unevenness of beam divergence.
Features
・ High optical output power Po = 175 mW @CW
・ Peak emission wavelength λp = 405 nm TYP.
・ Wide operating temperature range TC = −5 to +85°C
・ φ 3.8 mm small CAN package
APPLICATIONS
・ Blue-violet laser light source

Description
The NX6240GP is a 1 270 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATIONS
・ 10 Gb/s E-PON ONU
Features
・ Optical output power PO = 8.5 mW
・ Low threshold current Ith = 8 mA
・ Differential efficiency ηd = 0.3 W/A
・ Wide operating temperature range TC = −5 to +85°C
・ InGaAs monitor PIN-PD
CAN package φ 5.6 mm
・ Focal point 10.2 mm

Description
The NX6314EH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 1.25 Gb/s FTTH P2P
・ 3 Gb/s BTS
Features
・ Optical output power PO = 5.0 mW
・ Low threshold current Ith = 10 mA
・ Differential efficiency ηd = 0.4 W/A
・ Wide operating temperature range TC = −40 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 6.7 mm

Description
The NX6342EP is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 10 Gb/s BASE-LR/LW (IEEE802.3ae)
Features
・ Optical output power PO = 8.5 mW
・ Low threshold current Ith = 8 mA
・ Differential efficiency ηd = 0.23 W/A
・ Wide operating temperature range TC = −5 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 6.0 mm

Description
The NX6510GH is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 1.25 Gb/s FTTH P2P
・ OC-48 IR-2
Features
・ Optical output power PO = 5.0 mW
・ Low threshold current Ith = 10 mA
・ Differential efficiency ηd = 0.35 W/A
・ Wide operating temperature range TC = −40 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 7.5 mm

Description
The NX6511GH is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 1.25 Gb/s FTTH P2P
・ OC-48 IR-2
Features
・ Optical output power PO = 5.0 mW
・ Low threshold current Ith = 10 mA
・ Differential efficiency ηd = 0.35 W/A
・ Wide operating temperature range TC = −40 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 10 mm

Description
The NX6514EH is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
Applications
・ 1.25 Gb/s FTTH P2P
・ OC-48 IR-2
Features
・ Optical output power PO = 5.0 mW
・ Low threshold current Ith = 10 mA
・ Differential efficiency ηd = 0.35 W/A
・ Wide operating temperature range TC = −40 to +85°C
・ InGaAs monitor PIN-PD
・ CAN package φ 5.6 mm
・ Focal point 6.7 mm

DESCRIPTION
The PH5502B2NA1-E4 is an ambient illuminance sensor with a photo diode and current amplifier. This product has spectral characteristics close to human eye sensitivity and outputs light current proportional to the ambient brightness.
The PH5502B2NA1-E4 can be used to improve the performance and reduce the power consumption of digital equipment such as FPD-TV sets and mobile phones, by enabling automatic brightness control and automatic switching on and off of lighting systems.
FEATURES
・ Small and thin SON package 2.55 x 1.56 x 0.55mm
・ Spectral characteristics close to human eye sensitivity
Peak sensitivity wavelength 555 nm TYP.
・ Output characteristics proportional to illuminance
・ Large output light current 230 μA TYP.@100 lx (Fluorescent light)
・ Low voltage operation VCC = 1.8 to 5.5V
・ Pb-free
APPLICATIONS
・ FPD TV sets, displays
・ Mobile phones, smartphones
・ Notebook PCs, tablet PCs
・ DSCs, DVCs
・ FA equipment
・ Lighting systems, etc.

DESCRIPTION
The PH5503A2NA1 is an ambient illuminance sensor with a photo diode and current amplifier. This product has spectral characteristics close to human eye sensitivity and outputs light current proportional to the ambient brightness.
The PH5502B2NA1-E4 can be used to improve the performance and reduce the power consumption of digital equipment such as FPD-TV sets and mobile phones, by enabling automatic brightness control and automatic switching on and off of lighting systems.
FEATURES
・ Small and thin SON package 2.55 x 1.56 x 0.55mm
・ Spectral characteristics close to human eye sensitivity
Peak sensitivity wavelength 555 nm TYP.
・ Output characteristics proportional to illuminance
・ Output light current 60 μA TYP.@100 lx (Fluorescent light)
・ Reduced variation of output current among light sources
・ Low voltage operation VCC = 1.8 to 5.5V
・ Pb-free
APPLICATIONS
・ FPD TV sets, displays
・ Mobile phones, smartphones
・ Notebook PCs, tablet PCs
・ DSCs, DVCs
・ FA equipment
・ Lighting systems, etc.

DESCRIPTION
The PS2514-1 and PS2514L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon phototransistor, enabling relatively high switching speed with high load resistor of several kΩ.
The PS2514-1 is in a plastic DIP (Dual In-line Package) and the PS2514L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
・ High isolation voltage (BV = 5 000 Vr.m.s.)
・ High collector to emitter voltage (VCEO = 40 V)
・ Guaranteed maximum switching speed
(toff ≤ 25 μs @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
・ High-speed switching (ton = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
(toff = 15 μs TYP. @ IF = 5 mA, VCC = 5 V, RL = 5 kΩ)
・ Embossed tape product: PS2514L-1-F3: 2 000 pcs/reel
・ Pb-Free product
・ Safety standards
・ UL approved: No. E72422
・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
・ CQC approved: CQC11001056759/CQC11001056758, CQC11001056865/CQC11001057073
・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40008862 (Option)
APPLICATIONS
・ Power supply
・ FA equipment
・ Electronic electricity meter

DESCRIPTION
The PS2561F-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.
The PS2561F-1 is in a plastic DIP (Dual In-line Package) and the PS2561FL-1 is lead bending type (Gull-wing) for surface mount.
FEATURES
・ Operating ambient temperature: 110°C
・ High Isolation voltage (BV = 5 000Vr.m.s.)
・ High collector to emitter voltage (VCEO = 80V)
・ High current transfer ratio (CTR = 450% TYP.)
・ High-speed switching (tr = 5 μs TYP., tf = 7 μs TYP.)
・ Embossed tape product: PS2561FL-1-F3 : 2 000 pcs/reel
・ Pb-Free product
・ Safety standard
・ UL approved: No. E72422
APPLICATIONS
・ Power meter
・ Telephone/FAX.
・ Electronic electricity meter

DESCRIPTION
The PS9306L and PS9306L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9306L and PS9306L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9306L2 has 8mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9306L and PS9306L2 are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9306L is lead bending type (Gull-wing) for surface mounting.
The PS9306L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
FEATURES
・ Long creepage distance (8mm MIN.: PS9306L2)
・ Half size of 8-pin DIP
・ Peak output current (0.6A MAX., 0.4A MIN.)
・ High speed switching (tPLH, tPHL = 0.4μs MAX.)
・ High common mode transient immunity (CMH, CML = ±25kV/μs MIN.)
・ Embossed tape product : PS9306L-E3, PS9306L2-E3: 2 000 pcs/reel
・ Pb-Free product
・ Safety standards
・ UL approved: No. E72422
・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
・ SEMKO approved: No. 1115598
・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)
APPLICATIONS
・ IGBT, Power MOS FET Gate Driver
・ Industrial inverter
・ IH (Induction Heating)

Description
The PS9307L and PS9307L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9307L and PS9307L2 are in 6-pin plastic SDIP (Shrink Dual In-line Package). The PS9307L2 has 8 mm creepage distance. The mount area of 6-pin plastic SDIP is half size of 8-pin DIP.
The PS9307L and PS9307L2 are designed specifically for high common mode transient immunity (CMR) and high switching speed. It is suitable for driving IGBTs and MOS FETs.
The PS9307L is lead bending type (Gull-wing) for surface mounting.
The PS9307L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.

Description
The PS9309L and PS9309L2 are optical coupled high-speed, totem pole output (active high output type) isolators containing a GaAlAs LED on the input side and a photodiode and a signal processing circuit on the output side on one chip.
The PS9309L and PS9309L2 are specified high CMR and pulse width distortion with operating temperature. It is suitable for IPM drive.
The PS9309L is lead bending type (Gull-wing) for surface mounting. The PS9309L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.

DESCRIPTION
The PS9505, PS9505L1, PS9505L2 and PS9505L3 are optically coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9505 Series is designed specifically for high common mode transient immunity (CMR), high output current and high switching speed.
The PS9505 Series is suitable for driving IGBTs and MOS FETs.
The PS9505 Series is in a plastic DIP (Dual In-line Package).
The PS9505L1 is lead bending type for long creepage distance.
The PS9505L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
The PS9505L3 is lead bending type (Gull-wing) for surface mounting.
FEATURES
・ Long creepage distance (8mm MIN.: PS9505L1, PS9505L2)
・ Large peak output current (2.5A MAX., 2.0A MIN.)
・ High speed switching (tPLH, tPHL = 0.25μs MAX.)
・ UVLO (Under Voltage Lock Out) protection with hysteresis
・ High common mode transient immunity (CMH, CML = ±25kV/μs MIN.)
・ Embossed tape product: PS9505L2-E3: 1 000 pcs/reel
: PS9505L3-E3: 1 000 pcs/reel
・ Pb-Free product
・ Safety standards
・ UL approved: No. E72422
・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
・ SEMKO approved: No. 1115598
・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)
APPLICATIONS
・ IGBT, Power MOS FET Gate Driver
・ Industrial inverter
・ IH (Induction Heating)

DESCRIPTION
The PS9506, PS9506L1, PS9506L2 and PS9506L3 are optically coupled isolators containing a GaAlAs LED on the input side and a photo diode, a signal processing circuit and a power output transistor on the output side on one chip.
The PS9506 Series is designed specifically for high common mode transient immunity (CMR) and high switching speed.
The PS9506 Series is suitable for driving IGBTs and MOS FETs.
The PS9506 Series is in a plastic DIP (Dual In-line Package).
The PS9506L1 is lead bending type for long creepage distance.
The PS9506L2 is lead bending type for long creepage distance (Gull-wing) for surface mount.
The PS9506L3 is lead bending type (Gull-wing) for surface mounting.
FEATURES
・ Long creepage distance (8mm MIN.: PS9506L1, PS9506L2)
・ Peak output current (0.6A MAX., 0.4A MIN.)
・ High speed switching (tPLH, tPHL = 0.4μs MAX.)
・ High common mode transient immunity (CMH, CML = ±25kV/μs MIN.)
・ Embossed tape product : PS9506L2-E3, PS9506L3-E3: 1 000 pcs/reel
・ Pb-Free product
・ Safety standards
・ UL approved: No. E72422
・ CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
・ SEMKO approved: No. 1115598
・ DIN EN60747-5-2 (VDE0884 Part2) approved: No. 40024069 (Option)
APPLICATIONS
・ IGBT, Power MOS FET Gate Driver
・ Industrial inverter
・ IH (Induction Heating)